A method for manufacturing a semiconductor device having a circuit made up by a TFT (Thin Film Transistor) having GOLD (Gate-Drain Overlapped LDD) structure, which an LDD region overlaps which a portion of a gate electrode, wherein the formation of a concentration depth profile peak of hydrogen in a...http://www.google.de/patents/US20030020118?utm_source=gb-gplus-sharePatent US20030020118 - Semiconductor device and manufacturing method