A multi-layer type semiconductor device is disclosed, in which a plurality of semiconductor layers are formed in vertically opposite directions. The multi-layer type semiconductor device is obtained by forming a first semiconductor layer, an insulating layer and a second semiconductor layer in the mentioned...http://www.google.de/patents/US5324980?utm_source=gb-gplus-sharePatent US5324980 - Multi-layer type semiconductor device with semiconductor element layers stacked in opposite direction and manufacturing method thereof
Multi-layer type semiconductor device with semiconductor element layers ...
