Patent US7221596 - pFET nonvolatile memory

18

Vc
Vt Vt Vt ‘/-
R 513 HIH

V=OV

\/¢ V=OV IMc IMt. l\/lc e Mt“. IMQ |MtH_ TIP Vefi / F9 Pg F9

V=10V V=10V V=OV
V=OV V0 V=OV VC V=OV 14

@1

fl=1) v=9v 0=2) v=7v fl=3) v=2v

20/4 Adding Electrons on the Floating-Gate \24
IMc IMt \22
0 0 0 F9 \‘ 22 24
fl=°> v=0v' v=0v v=0v //' v=0v ’/I

“BB

\ \/0 v=1ov V0 v=1ov V0 v=0v 16 vej [€i}—lL] Vt ve] /" Il\/lc egIMt Mc

IMc Mt IMt F9 F9 F9

fl=1) v=1v fi=2) v=3v 0=3) v=2v
Removing Electrons from the Floating-Gate
FIG. 3

1111-nva 'S'fl

L002 ‘zz /ivw

9I J0 ‘E 199lIS

ZH 96S‘IZZ‘L S11

Vt V

E3; E3;

II“ 35"‘ M1OI V~ \~ V

II“ 1% aari

\/C? \/Ig \/>

II“ 3”‘ Mat“

FIG. 6C

Patente