A method of semiconductor fabrication includes the steps of forming a dielectric layer on a first surface of a semiconductor wafer having a plurality of laterally distributed semiconductor devices selectively interconnected on the first surface and bonding a support substrate to the first surface of...http://www.google.de/patents/US6084284?utm_source=gb-gplus-sharePatent US6084284 - Integrated circuit including inverted dielectric isolation
Integrated circuit including inverted dielectric isolation
