A semiconductor memory device having a side wall insulation film, comprises a first memory cell located on an active area of a semiconductor substrate, the first memory cell having a first gate electrode, a first source electrode and a first drain electrode; a second memory cell located on the semiconductor...http://www.google.de/patents/US20030210582?utm_source=gb-gplus-sharePatent US20030210582 - Semiconductor memory device having a side wall insulation film
Semiconductor memory device having a side wall insulation film
