ALD metal oxide deposition process using direct oxidation

OTHER PUBLICATIONS

"Nitridation of Hafnium Silicate Thin Films", Chatham, Hood; et al., Mat. Res. Soc. Symp. Proc. vol. 811, Apr. 12-16, 2004. D7.5.1. "Interval Annealing During Alternating Pulse Deposition", Conley. J.F.; et al., Mat. Res. Soc. Symp. Proc. vol. 811, Apr. 12-16, 2004. Dl.3.1.

Ho, et al., "Suppressed crystalization of Ht-based gate dielectrics by controlled addition of A1203 using atomic layer deposition", Applied Physics Letters, American Institute of Physics, New York, US, vol. 81, No. 22, Nov. 25, 2002, pp. 4218-4220.

Kawahara, et al., "Effects of HI sources, oxidizing agents, andNH3 radicals on properties of HfAlOx films prepared by atomic layer deposition", IWGI 2003, Lokyo, Nov. 6, 2003. pp. 32-37. Kukli, et al., "Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethyimefhylamide) and Water", Chemical Vapor Deposition, VCH Publishers, Weinheim, DE, vol. 8, No. 5, Sep. 2002, pp. 199-204.

Ohshita, et al., "Hfl-xSix02 deposition by metal organic chemical
vapor deposition using the Hf)NEt2)4/SiH(NE12)3/02 gas system",
Preparation and Characterization, Elsevier Sequioa, NL, vol. 416,
No. 1-2, Sep. 2, 2002, pp. 208-211.

Visokay, et al., "Application of HISiON as a gate dielectric material",
Applied Physics Letter, American Institute of Physics, New York,
US, vol. 80, No. 17, Apr. 29, 2002, pp. 3183-3185.
Hwang, et al. "Nanometer-Size y-Pb02-type Ti02 in Garnet: A
Thermobarometer for Ultrahigh-Pressure Metamorphism," Science
Vo. 288 (Apr. 14, 2000).

Argarwal, et al. "Challenges in Integrating the High-K Gate Dielectric Film to the Conventional CMOS Process Flow," Mat. Sec. Soc. Sump. Proc. vol. 670 (2001).

Clark-Phelps, et al. "Engineered Tantalum Aluminate and Hafnium Aluminate ALD Films for Ultrafhin Dielectric Films with Improved Electrical and Thermal Properties," Mat. Res. Soc. Symp. Proc. vol. 670 (2001).

Nilnisto. et al. "Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advance applications," Materials Science and Engineering B41 (1996) 23-29.

Hendrix, et al., "Composition Control of HIl-xSix02 Films Deposited on Si by Chemical-vapor Deposition Using Amide Precursors," Applied Physics Letters, vol. 80, No. 13 (Apr. 1, 2002).

Cheon, et al. "Gas Phase Photoproduction of Diatomic Metal Nitrides During Metal Nitride Laser Chemical Vapor Deposition," Inorg. Chem. 1999, 38, 2238-2239.

Ohshita, et al. "Hf02 Growth by Low-pressure Chemical Vapor Deposition Using the Hf(N(C2H5)2)4/02 Gas System," Journal of Crystal Growth 233 (2001) 292-297.

Balog, et al. "Chemical Vapor Deposition and Characterization of Hf02 Films from Organo-Hafnium Compounds," Thin Solid Films, 41 (1977)247-259.

Ritala. etal. Acad. Sci. Fenn. Ser. Ail. Chemica257 (1994)pp. 1-48.
Kattelus, et al. "Electrical Properties of Tantalum Based Composite
Oxide Films," Mat. Res. Soc. Symp. Proc, 284 (1993) 511-516.
Kuldi, et al. "Tailoring the Dielectric Properties of Hf02-Ta205
Nanolaminates," Applied Physics Letters, vol. 68, No. 26 (Jun. 24,
1996), pp. 3737-3739.

Ritala, et al., "Development of Crystallinity and Morphology in
Hafnium Dioxide Thin Films Grown by Atomic Layer Epitaxy," Thin
Solid Films, vol. 250, No. 1-2, (Oct. 1, 1994), p. 72-80.
George, etal. "Surface Chemistry for Atomic Layer Growth," J. Phys.
Chem. (1996), 100, 13121-13131.

Niinisto, et al. "Synthesis of Oxide Thin Films and Overlayers by Atomic Layer Epitaxy for Advanced Applications," Materials Science and Engineering B41 (1996) 23-29.

Applied Materials Instruction Manual, "AMP 3300 Plasma I - Low
Temperature Nitride Reactor System", Semiconductor Systems Divi-
sion, Protective Order - Civil No. 02-CV-3457, dated Jan. 18, 1979.
H. Nakanishi et al., "Studies on Si02 Si02 Bonding with
Hydrofluoric Acid—Room Temperature and Low Stress Bonding
Technique for Mems—"; IEEE, 1998, pp. 609-614.
Kasprzak et al., "Near-Ideal Si-Si02 Interfaces", IBM J. Res.
Develop, vol. 24, No. 3 May 1980, pp. 348-352.
D.R. Cote et al., "Plasma-Assisted Chemical Vapor Deposition of
Dielectric Thin Films for ULSI Semiconductor Circuits", IBM J. Res.
Develop, vol. 43, No. 1/2, Jan./Mar. 1999, pp. 5-38.
H. F. Okorn-Schmidt, "Characterization of Silicon Surface Prepara-
tion Processes for Advanced Gate Dielectrics", IBM J. Res. Develop,
vol. 43, No. 3, May 1999, pp. 351-365.

Y. Kuo et al., "Plasma Processing in the Fabrication of Amorphous
Silicon Thin-Films-Transistor Arrays", IBM J. Res. Develop, vol. 43,
No. 1/2, Jan./Mar. 1999, pp 73-88.

H. Carre et al., "Semiconductor Manufacturing Technology at IBM",

IBM J. Res. Develop, vol. 26, No. 5, Sep. 1982, pp. 528-531.

R. H. Collins et al., "Silicon Process Technology for Monlifhic

Memory", IRMJ. Res. Develop, Jan. 1972, pp. 2-10.

A. T. Fromhold, Jr. et al., "Oxide Growth in an rf Plasma", J. Appl.

Phys. 51(12), Dec. 1980, pp. 6377-6392.

PK. Roy et al., "Stacked High-e Gate Dielectric for Gigascale Integrated of Metal-Oxide-Semiconductor Technologies", Applied Physics Letters, vol. 72, No. 22, Jun. 1, 1998, pp. 2835-2837. D. W. Hess, "Plasma-Assisted Oxidation Anodization, and Nitridation of Silicon", IBM J. Res. Develop, vol. 43, No. 1/2, Jan./Mar. 1999, pp. 127-145.

S.A. Nelson et al., "A Structural and Electrical Comparison of Thin
Si02 Films Grown on Silicon by Plasma Anodization and Rapid
Thermal Processing to Furnace Oxidation", Applied Physics Letters,
vol. 63, No. 10, May 15, 1988, pp. 5027-5035.
S. Taylor et al., "a Review of the Plasma Oxidation of Silicon and its
Applications", Semiconductor Science Tech. vol. 8, 1993, pp. 1426-
1433, ( Received Nov. 5, 1992.).

P. Freidal, et al., "Review of Oxidation Processes in Plasmas", J.
Physics Chem. Solids, vol. 44, No. 5, pp. 353-364, 1983.
Y. Kawai, et al., "Ultra-Low-Temperature Growth of Jigh-Integrity
Gate Oxide Films by Low-Energy Ion-Assisted Oxidation", Applied
Physics Letters, vol. 64, No. 17, Apr. 25, 1994, pp. 2223-2225.
Deen, et al. Proceedings of the Symposium on "Silicon Nitride and
Silicon Dioxide Thin Insulating Films", 1994, Eletrochemical Soci-
ety, Inc. vol. 97-10 pp. 229-243.

D.L. Pulfrey, et al., "Preparation and Properties of Plasma-Anodized Silicon Dioxide Films", Solid State Electronics, 1974, vol. 17, pp. 627-632, Received on (Sep. 1973).

S. Gourrier, etal., "Review of Oxide Formation in a Plasma", Plasma Chemistry and Plasma Processing vol. 1, No. 3, 1982, pp. 217-232 (Received Jan. 19, 1981).

D.L. Pulfrey, et al., "The Anodization of Si in an RF Plasma", Solid State Science and Technology, 1974, vol. 120, No. 11, pp. 1529-1535, Nov. 1972.

A. Reisman, "Assisted Oxidatiion andAnnealing in VLSI andULSI", Department of Electrical and Computer Engineering, 1986, pp. 364378.

John F. O'Hanlon, "Gas Discharge Anodization", Oxides and Oxide Films, vol. 5, A.K. Vijh, Ed., Marcel Dekker, New York, 1977, IBM Corporation, Chpt. 2, pp. 105-166.

C.J. Dell'Oca, et al., "Anodic Oxide Films", Physics of Thin Films, vol. 6, H. Francombe and R. W. Hoffmann, Eds., Academic Press, Inc., New York, 1971, pp. 1-79.

Nelson et al., "Thin Silicon Oxides Grown by Low-Temperature RF Plasma Anodization and Deposition", Applied Physics Letters, vol. 50, pp. 1095-1097 (1987).

Vossen, et al., "Thin Film Processes", Academic Press Inc., 1978, Chpt II., pp. 24-73.

Oana, Yasuhisa "5.1: Current & Future Technology of Low Temperature Poly-Si TFT - LCDs", Toshiba Corporation, pp. 1-4. Singer, Peter "High-K, Metal Gates a 'Go' for 45 nm", Semiconductor International Reed Business Information 2007. U.S. Appl. No. 60/326,830 filed on Oct. 2, 2001.

* cited by examiner