CN101512665B - 非易失性存储器及用于在初始编程电压的修整期间减少擦除/写入循环的方法 - Google Patents
非易失性存储器及用于在初始编程电压的修整期间减少擦除/写入循环的方法 Download PDFInfo
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- CN101512665B CN101512665B CN200780033573.2A CN200780033573A CN101512665B CN 101512665 B CN101512665 B CN 101512665B CN 200780033573 A CN200780033573 A CN 200780033573A CN 101512665 B CN101512665 B CN 101512665B
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Abstract
Description
Claims (34)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/531,217 | 2006-09-12 | ||
US11/531,223 US7606077B2 (en) | 2006-09-12 | 2006-09-12 | Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
US11/531,217 US7606091B2 (en) | 2006-09-12 | 2006-09-12 | Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
US11/531,223 | 2006-09-12 | ||
PCT/US2007/077295 WO2008033679A2 (en) | 2006-09-12 | 2007-08-30 | Non-volatile memory and method for reduced erase/write cycling during trimming of initial programming voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101512665A CN101512665A (zh) | 2009-08-19 |
CN101512665B true CN101512665B (zh) | 2014-03-26 |
Family
ID=39169480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200780033573.2A Expired - Fee Related CN101512665B (zh) | 2006-09-12 | 2007-08-30 | 非易失性存储器及用于在初始编程电压的修整期间减少擦除/写入循环的方法 |
Country Status (2)
Country | Link |
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US (1) | US7606091B2 (zh) |
CN (1) | CN101512665B (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
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US7599223B2 (en) * | 2006-09-12 | 2009-10-06 | Sandisk Corporation | Non-volatile memory with linear estimation of initial programming voltage |
US7453731B2 (en) * | 2006-09-12 | 2008-11-18 | Sandisk Corporation | Method for non-volatile memory with linear estimation of initial programming voltage |
US7606077B2 (en) * | 2006-09-12 | 2009-10-20 | Sandisk Corporation | Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
JP5032290B2 (ja) * | 2007-12-14 | 2012-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101099982B1 (ko) * | 2008-11-14 | 2011-12-28 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치의 동작 방법 |
US8374036B2 (en) * | 2008-11-14 | 2013-02-12 | Hynix Semiconductor Inc. | Method of operating nonvolatile memory device |
US8874825B2 (en) * | 2009-06-30 | 2014-10-28 | Sandisk Technologies Inc. | Storage device and method using parameters based on physical memory block location |
US8681562B2 (en) | 2011-01-10 | 2014-03-25 | Micron Technology, Inc. | Memories and methods of programming memories |
KR102016041B1 (ko) | 2012-10-11 | 2019-08-30 | 삼성전자주식회사 | 비휘발성 메모리 장치의 프로그램 방법 |
US8897088B2 (en) * | 2013-01-30 | 2014-11-25 | Texas Instrument Incorporated | Nonvolatile logic array with built-in test result signal |
US9142298B2 (en) | 2013-02-11 | 2015-09-22 | Sandisk Technologies Inc. | Efficient smart verify method for programming 3D non-volatile memory |
US8891308B1 (en) | 2013-09-11 | 2014-11-18 | Sandisk Technologies Inc. | Dynamic erase voltage step size selection for 3D non-volatile memory |
US8982637B1 (en) | 2013-09-12 | 2015-03-17 | Sandisk Technologies Inc. | Vread bias allocation on word lines for read disturb reduction in 3D non-volatile memory |
US20150121156A1 (en) * | 2013-10-28 | 2015-04-30 | Sandisk Technologies Inc. | Block Structure Profiling in Three Dimensional Memory |
KR20150142921A (ko) * | 2014-06-12 | 2015-12-23 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 그것을 포함하는 메모리 시스템 및 그것의 동작 방법 |
US9564226B1 (en) | 2015-10-30 | 2017-02-07 | Sandisk Technologies Llc | Smart verify for programming non-volatile memory |
CN108242252B (zh) * | 2016-12-27 | 2023-10-10 | 兆易创新科技集团股份有限公司 | 一种nand闪存芯片的测试样本 |
CN109949836B (zh) * | 2019-02-19 | 2020-09-08 | 华中科技大学 | 一种改善选通管器件性能的操作方法 |
CN109979508A (zh) | 2019-03-15 | 2019-07-05 | 合肥沛睿微电子股份有限公司 | 固态硬盘装置与相关的固态硬盘控制电路 |
CN110033818B (zh) * | 2019-03-20 | 2021-01-22 | 上海华虹宏力半导体制造有限公司 | Sonos闪存芯片编程电压筛选方法 |
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US6304487B1 (en) * | 2000-02-28 | 2001-10-16 | Advanced Micro Devices, Inc. | Register driven means to control programming voltages |
US20030002345A1 (en) * | 2000-05-04 | 2003-01-02 | Dror Avni | Programming and erasing methods for an NROM array |
US20050018483A1 (en) * | 2002-07-12 | 2005-01-27 | Kenichi Imamiya | Nonvolatile semiconductor memory and its test method |
US7064986B2 (en) * | 2003-12-30 | 2006-06-20 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof |
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US5095344A (en) | 1988-06-08 | 1992-03-10 | Eliyahou Harari | Highly compact eprom and flash eeprom devices |
US5070032A (en) | 1989-03-15 | 1991-12-03 | Sundisk Corporation | Method of making dense flash eeprom semiconductor memory structures |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US5132935A (en) | 1990-04-16 | 1992-07-21 | Ashmore Jr Benjamin H | Erasure of eeprom memory arrays to prevent over-erased cells |
US5343063A (en) | 1990-12-18 | 1994-08-30 | Sundisk Corporation | Dense vertical programmable read only memory cell structure and processes for making them |
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KR0169267B1 (ko) | 1993-09-21 | 1999-02-01 | 사토 후미오 | 불휘발성 반도체 기억장치 |
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KR0185611B1 (ko) | 1995-12-11 | 1999-04-15 | 김광호 | 불휘발성 반도체 메모리장치의 고전압 레벨 최적화 회로 및 그 방법 |
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KR101402071B1 (ko) | 2006-09-12 | 2014-06-27 | 샌디스크 테크놀로지스, 인코포레이티드 | 초기 프로그래밍 전압의 트리밍 동안 감소된 소거/기입 사이클링을 위한 비휘발성 메모리 및 방법 |
US7453731B2 (en) | 2006-09-12 | 2008-11-18 | Sandisk Corporation | Method for non-volatile memory with linear estimation of initial programming voltage |
US7599223B2 (en) | 2006-09-12 | 2009-10-06 | Sandisk Corporation | Non-volatile memory with linear estimation of initial programming voltage |
EP2383748A3 (en) | 2006-09-12 | 2012-03-28 | SanDisk Corporation | Non-volatile memory and method for linear estimation of initial programming voltage |
US7606077B2 (en) | 2006-09-12 | 2009-10-20 | Sandisk Corporation | Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
-
2006
- 2006-09-12 US US11/531,217 patent/US7606091B2/en active Active
-
2007
- 2007-08-30 CN CN200780033573.2A patent/CN101512665B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6304487B1 (en) * | 2000-02-28 | 2001-10-16 | Advanced Micro Devices, Inc. | Register driven means to control programming voltages |
US20030002345A1 (en) * | 2000-05-04 | 2003-01-02 | Dror Avni | Programming and erasing methods for an NROM array |
US20050018483A1 (en) * | 2002-07-12 | 2005-01-27 | Kenichi Imamiya | Nonvolatile semiconductor memory and its test method |
US7064986B2 (en) * | 2003-12-30 | 2006-06-20 | Samsung Electronics Co., Ltd. | Non-volatile semiconductor memory device using differential start programming voltage and programming method thereof |
Also Published As
Publication number | Publication date |
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US20080062768A1 (en) | 2008-03-13 |
CN101512665A (zh) | 2009-08-19 |
US7606091B2 (en) | 2009-10-20 |
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