CN101512666B - 非易失性存储器和用于线性估计初始编程电压的方法 - Google Patents
非易失性存储器和用于线性估计初始编程电压的方法 Download PDFInfo
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- CN101512666B CN101512666B CN2007800335107A CN200780033510A CN101512666B CN 101512666 B CN101512666 B CN 101512666B CN 2007800335107 A CN2007800335107 A CN 2007800335107A CN 200780033510 A CN200780033510 A CN 200780033510A CN 101512666 B CN101512666 B CN 101512666B
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Images
Classifications
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- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/12—Programming voltage switching circuits
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
- G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/88—Masking faults in memories by using spares or by reconfiguring with partially good memories
Abstract
Description
Claims (26)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/531,227 US7453731B2 (en) | 2006-09-12 | 2006-09-12 | Method for non-volatile memory with linear estimation of initial programming voltage |
US11/531,230 US7599223B2 (en) | 2006-09-12 | 2006-09-12 | Non-volatile memory with linear estimation of initial programming voltage |
US11/531,227 | 2006-09-12 | ||
US11/531,230 | 2006-09-12 | ||
PCT/US2007/077449 WO2008033693A2 (en) | 2006-09-12 | 2007-08-31 | Non-volatile memory and method for linear estimation of initial programming voltage |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101512666A CN101512666A (zh) | 2009-08-19 |
CN101512666B true CN101512666B (zh) | 2013-07-31 |
Family
ID=39169479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2007800335107A Expired - Fee Related CN101512666B (zh) | 2006-09-12 | 2007-08-31 | 非易失性存储器和用于线性估计初始编程电压的方法 |
Country Status (2)
Country | Link |
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US (1) | US7453731B2 (zh) |
CN (1) | CN101512666B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110648709A (zh) * | 2018-06-26 | 2020-01-03 | 北京兆易创新科技股份有限公司 | 字线电压的施加方法、装置、电子设备和存储介质 |
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US7606077B2 (en) * | 2006-09-12 | 2009-10-20 | Sandisk Corporation | Non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
US7606091B2 (en) * | 2006-09-12 | 2009-10-20 | Sandisk Corporation | Method for non-volatile memory with reduced erase/write cycling during trimming of initial programming voltage |
US7599223B2 (en) | 2006-09-12 | 2009-10-06 | Sandisk Corporation | Non-volatile memory with linear estimation of initial programming voltage |
US7551483B2 (en) * | 2007-04-10 | 2009-06-23 | Sandisk Corporation | Non-volatile memory with predictive programming |
US7643348B2 (en) * | 2007-04-10 | 2010-01-05 | Sandisk Corporation | Predictive programming in non-volatile memory |
JP5032290B2 (ja) * | 2007-12-14 | 2012-09-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US7826271B2 (en) | 2008-06-12 | 2010-11-02 | Sandisk Corporation | Nonvolatile memory with index programming and reduced verify |
US7800945B2 (en) | 2008-06-12 | 2010-09-21 | Sandisk Corporation | Method for index programming and reduced verify in nonvolatile memory |
US7813172B2 (en) | 2008-06-12 | 2010-10-12 | Sandisk Corporation | Nonvolatile memory with correlated multiple pass programming |
US7796435B2 (en) * | 2008-06-12 | 2010-09-14 | Sandisk Corporation | Method for correlated multiple pass programming in nonvolatile memory |
US7715235B2 (en) * | 2008-08-25 | 2010-05-11 | Sandisk Corporation | Non-volatile memory and method for ramp-down programming |
US8305807B2 (en) * | 2010-07-09 | 2012-11-06 | Sandisk Technologies Inc. | Detection of broken word-lines in memory arrays |
US8842469B2 (en) * | 2010-11-09 | 2014-09-23 | Freescale Semiconductor, Inc. | Method for programming a multi-state non-volatile memory (NVM) |
JP2013143155A (ja) * | 2012-01-06 | 2013-07-22 | Powerchip Technology Corp | 不揮発性半導体記憶装置とその書き込み方法 |
US8773930B2 (en) * | 2012-02-03 | 2014-07-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | Built-in test circuit and method |
US9165683B2 (en) | 2013-09-23 | 2015-10-20 | Sandisk Technologies Inc. | Multi-word line erratic programming detection |
US9460809B2 (en) | 2014-07-10 | 2016-10-04 | Sandisk Technologies Llc | AC stress mode to screen out word line to word line shorts |
US9443612B2 (en) | 2014-07-10 | 2016-09-13 | Sandisk Technologies Llc | Determination of bit line to low voltage signal shorts |
US9484086B2 (en) | 2014-07-10 | 2016-11-01 | Sandisk Technologies Llc | Determination of word line to local source line shorts |
US9514835B2 (en) | 2014-07-10 | 2016-12-06 | Sandisk Technologies Llc | Determination of word line to word line shorts between adjacent blocks |
US9240249B1 (en) | 2014-09-02 | 2016-01-19 | Sandisk Technologies Inc. | AC stress methods to screen out bit line defects |
US9202593B1 (en) | 2014-09-02 | 2015-12-01 | Sandisk Technologies Inc. | Techniques for detecting broken word lines in non-volatile memories |
US9449694B2 (en) | 2014-09-04 | 2016-09-20 | Sandisk Technologies Llc | Non-volatile memory with multi-word line select for defect detection operations |
JP6196199B2 (ja) | 2014-09-12 | 2017-09-13 | 東芝メモリ株式会社 | 半導体記憶装置 |
CN105529048B (zh) * | 2014-09-28 | 2019-11-26 | 华邦电子股份有限公司 | 快闪存储器装置及快闪存储器的写入方法 |
KR20190000663A (ko) * | 2017-06-23 | 2019-01-03 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
US10818358B2 (en) | 2017-09-22 | 2020-10-27 | Toshiba Memory Corporation | Memory system including a semiconductor memory having a memory cell and a write circuit configured to write data to the memory cell |
JP2020119618A (ja) | 2019-01-21 | 2020-08-06 | キオクシア株式会社 | メモリシステム |
KR20210118462A (ko) * | 2019-05-22 | 2021-09-30 | 양쯔 메모리 테크놀로지스 씨오., 엘티디. | 다중 레벨 셀 nand 플래시 메모리 장치를 프로그램하는 방법 및 mlc nand 플래시 메모리 장치 |
US11430528B2 (en) | 2020-08-25 | 2022-08-30 | Micron Technology, Inc. | Determining a read voltage based on a change in a read window |
US11189355B1 (en) | 2020-08-25 | 2021-11-30 | Micron Technology, Inc. | Read window based on program/erase cycles |
US11392312B2 (en) | 2020-08-25 | 2022-07-19 | Micron Technology, Inc. | Read calibration based on ranges of program/erase cycles |
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-
2006
- 2006-09-12 US US11/531,227 patent/US7453731B2/en not_active Expired - Fee Related
-
2007
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---|---|---|---|---|
CN110648709A (zh) * | 2018-06-26 | 2020-01-03 | 北京兆易创新科技股份有限公司 | 字线电压的施加方法、装置、电子设备和存储介质 |
Also Published As
Publication number | Publication date |
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US20080062765A1 (en) | 2008-03-13 |
CN101512666A (zh) | 2009-08-19 |
US7453731B2 (en) | 2008-11-18 |
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