CN103618144A - Thin-substrate phase correction vibrator difference beam plane horn antenna - Google Patents
Thin-substrate phase correction vibrator difference beam plane horn antenna Download PDFInfo
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- CN103618144A CN103618144A CN201310619383.6A CN201310619383A CN103618144A CN 103618144 A CN103618144 A CN 103618144A CN 201310619383 A CN201310619383 A CN 201310619383A CN 103618144 A CN103618144 A CN 103618144A
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Abstract
The invention relates to a horn antenna, in particular to a thin-substrate phase correction vibrator difference beam plane horn antenna which comprises a micro-strip feeder line (2), a horn antenna body (3) and vibrators (4), and the micro-strip feeder line (2), the horn antenna body (3) and the vibrators (4) are arranged on a dielectric substrate (1). The horn antenna body (3) is composed of a first metal plane (7), a second metal plane (8) and two rows of metalized via hole horn side walls (9), odd-number metalized via hole arrays (11) and even-number dielectric-loaded waveguides (17) are arranged in the horn antenna body (3), the dielectric-loaded waveguides (17) are connected with the vibrators (4) respectively on the caliber face (10) of the horn antenna body (3), and the vibrators (4) connected with the left half antenna (15) is symmetrical with the vibrators (4) connected with the right half antenna (16). Electromagnetic waves can reach the vibrators in an in-phase mode and then are reradiated, and polarization of a radiation field is parallel with the substrate. The antenna can be made through a thin substrate, and is high in gain, large in zero depth, low in cost and compact in structure.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of thin substrate phasing oscillator difference beam plane horn antenna.
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Background technology
Horn antenna has a wide range of applications in the systems such as satellite communication, terrestrial microwave link and radio telescope.But the huge physical dimension of three-dimensional horn antenna has restricted its application and development in planar circuit.In recent years, the proposition of substrate integrated waveguide technology and development have well promoted the development of plane horn antenna.Substrate integration wave-guide have size little, lightweight, be easy to the advantages such as integrated and processing and fabricating.The substrate integration wave-guide plane horn antenna of the plane based on substrate integration wave-guide, except having the feature of horn antenna, has also well been realized miniaturization, the lightness of horn antenna, and has been easy to be integrated in microwave and millimeter wave planar circuit.Traditional substrate integration wave-guide plane horn antenna have a restriction, the thickness of antenna horn aperture substrate is greater than 1/10th operation wavelengths, antenna just can have good radiance, not so due to reflection, the energy emission in antenna is not gone out.So just require the thickness of antenna substrate can not be too thin, not only volume and weight be very large at L-band etc., will to meet this requirement very difficult especially, very thick substrate compared with low-frequency range, has offset integrated advantage, but also has increased cost.The polarised direction of these antenna radiation field is generally all perpendicular to medium substrate in addition, and some application needs the polarization of radiation field to be parallel to medium substrate.More existing antennas load the radiation that paster improves thin substrate plane horn antenna before plane horn antenna, but the patch size loading is larger, and working band is narrower.Conventionally in order to realize difference beam, need to adopt special feeder equipment, these feeder equipments or difficult realization in planar circuit, or the phase-shift circuit of arrowband.The gain of traditional substrate integration wave-guide plane horn antenna is relatively low in addition, its reason is because horn mouth constantly opens, while causing Electromagnetic Wave Propagation to horn mouth diametric plane, occur that phase place is asynchronous, radiation directivity and gain reduce, make the zero deeply more shallow and slope is lower of the difference beam antenna that forms, affect the direction finding precision of radar.The existing methods such as medium loading, medium prism that adopt, correct loudspeaker aperture field, but these phase alignment structures have increased the overall structure size of antenna at present.
Summary of the invention
technical problem:the object of the invention is to propose a kind of thin substrate phasing oscillator difference beam plane horn antenna, the polarised direction of this radiation field of aerial is parallel with medium substrate, can use very thin medium substrate manufacture, in the situation that the electric very thin thickness of substrate, still there is good radiance, and this plane horn antenna can RECTIFYING ANTENNA bore face on electromagnetic phase place inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam.
technical scheme:thin substrate phasing oscillator difference beam plane horn antenna of the present invention, is characterized in that this antenna comprises the integrated horn antenna of microstrip feed line, substrate and a plurality of oscillator being arranged on medium substrate; The first port of described microstrip feed line is the input/output port of this antenna, and the second port of microstrip feed line and the integrated horn antenna of substrate join; The integrated horn antenna of substrate by be positioned at medium substrate one side the first metal flat, be positioned at the second metal flat of medium substrate another side and form with the two row's metallization via hole loudspeaker sidewalls that are connected the first metal flat and the second metal flat through medium substrate, width between two row's metallization via hole loudspeaker sidewalls of the integrated horn antenna of substrate becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face of the integrated horn antenna of substrate; In the integrated horn antenna of substrate, there is odd number metallization arrays of vias to connect the first metal flat and the second metal flat, the head end of metallization arrays of vias is inner at the integrated horn antenna of substrate, and the tail end of metallization arrays of vias is on the bore face of the integrated horn antenna of substrate; In metallization arrays of vias, there is an intermediate metallization arrays of vias that the integrated horn antenna of substrate is divided into a symmetrical left side half antenna and right half antenna two parts; Adjacent two metallization arrays of vias or row's metallization via hole loudspeaker sidewall that metallization arrays of vias is adjacent, form dielectric-filled waveguide with the first metal flat and the second metal flat, outside bore face, each dielectric-filled waveguide is connected to an oscillator.
The conduction band of microstrip feed line and the first metal flat join, and the ground plane of microstrip feed line and the second metal flat join.
The width of dielectric-filled waveguide will make electromagnetic wave can propagate therein and not be cut off.
In described metallization arrays of vias, adjust the distance between adjacent two row metallization arrays of vias or adjust the distance between a row metallization arrays of vias and substrate integration wave-guide horn antenna side-wall metallic via hole, can change the width of dielectric-filled waveguide, and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide, make to arrive on bore face electromagnetic PHASE DISTRIBUTION more even.
In described metallization arrays of vias, the length that changes row or multiple row metallization arrays of vias can change the length that respective media is filled waveguide, makes to arrive on bore face electromagnetic PHASE DISTRIBUTION more even.
Each oscillator has respectively the first radiation arm and the second radiation arm on the two sides that is positioned at medium substrate, the first radiation arm of oscillator is connected with the first metal flat of the integrated horn antenna of substrate, the second radiation arm of oscillator is connected with the second metal flat of the integrated horn antenna of substrate, and the first radiation arm and second radiation arm of each oscillator stretch in the opposite direction.
The direction of extension of the first radiation arm of all oscillators that left half antenna connects is all identical, and the direction of extension of the second radiation arm of all oscillators that left half antenna connects is all identical; The direction of extension of the first radiation arm of all oscillators that right half antenna connects is all identical, and the direction of extension of the second radiation arm of all oscillators that right half antenna connects is all identical; The direction of extension of the second radiation arm of the oscillator that the direction of extension of the first radiation arm of the oscillator that left half antenna connects connects with right half antenna is identical, and the direction of extension of the first radiation arm of the oscillator that the direction of extension of the second radiation arm of the oscillator that left half antenna connects connects with right half antenna is identical.
In metallization via hole loudspeaker sidewall and metallization arrays of vias, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall and the metallization arrays of vias that form can be equivalent to electric wall.
In dielectric-filled waveguide, the propagation phase velocity of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the phase velocity that main mould is propagated is lower; Otherwise the width of dielectric-filled waveguide is narrower, the phase velocity that main mould is propagated is higher.Electromagnetic wave is from one end input of microstrip feed line, and the other end of process microstrip feed line enters substrate integration wave-guide horn antenna, propagates after a segment distance, runs into metallization arrays of vias, just enters respectively each dielectric-filled waveguide transmission.
In the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane, mainly by length and the width of each dielectric-filled waveguide, determined, adjust the distance between adjacent metal arrays of vias, just can regulate the width of dielectric-filled waveguide, and then just can regulate electromagnetic wave in the relative phase velocity of each dielectric waveguide transmission; The length of adjusting metallization arrays of vias is just equivalent to regulate the length of dielectric-filled waveguide, so just can be so that arrive the bore face of antenna by the electromagnetic wave homophase of each dielectric-filled waveguide, on antenna opening diametric plane, the phase place of each dielectric-filled waveguide port is the same like this.
Electromagnetic wave from each dielectric waveguide enters oscillator radiation by antenna opening diametric plane, because the radiation arm of left half antenna oscillator and the radiation arm of right half antenna oscillator are symmetrical, therefore the polarised direction of left half antenna oscillator radiation field is contrary with the polarised direction of right half antenna oscillator radiation field, and so just the direction at parallel medium substrate has formed difference beam.
Just can be controlled in the above described manner the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane, if made, by each dielectric-filled waveguide transmission electromagnetic wave homophase, arrive antenna opening diametric plane, and then homophase enter each oscillator radiation, the polarised direction of radiation field also becomes with substrate and connects subparallel horizontal direction, so not only can be so that the in the situation that of the thin substrate of electricity, whole antenna has good radiance, and reaches the raising aperture efficiency of antenna and the object of gain.
Owing to there being a plurality of metallization arrays of vias that the bore face of antenna is divided into a lot of little bore faces, it is very little that the size of the oscillator connecing on each osculum diametric plane can be done, and the compact conformation of antenna, size also only increase seldom like this.
Antenna, from feed microstrip line to oscillator, be all the substrate integrated wave guide structure of sealing, so feeder loss is less.
In like manner also can on the bore face of antenna, realize specific PHASE DISTRIBUTION as required.
beneficial effect:the beneficial effect of the thin substrate phasing of the present invention oscillator difference beam plane horn antenna is that the polarised direction of this radiation field of aerial is parallel with medium substrate; This antenna can use the medium substrate manufacture lower than the thickness of 2 percent wavelength, substrate thickness far below desired 1/10th wavelength of common plane horn antenna, in the situation that the electric very thin thickness of substrate, still there is good radiance, for example, in 6GHz frequency, adopt the thickness of epoxide resin material substrate to be reduced to 0.5mm by 2.5mm, thereby greatly reduce size, weight and cost; And this plane horn antenna inside be embedded with metallization arrays of vias can RECTIFYING ANTENNA bore face on electromagnetic phase place inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam, compact conformation, the feeder loss of antenna are little.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation of the thin substrate phasing of the present invention oscillator difference beam plane horn antenna.
In figure, have: medium substrate 1, microstrip feed line 2, the integrated horn antenna 3 of substrate, layered transducer elements 4, the first port 5 of microstrip feed line 2, the second port 6 of microstrip feed line 2, the first metal flat 7 of medium substrate 1, the second metal flat 8 of medium substrate 1, metallization via hole loudspeaker sidewall 9, the bore face 10 of antenna 3, metallization arrays of vias 11, the head end 12 of metallization arrays of vias 11, the tail end 13 of metallization arrays of vias 11, intermediate metallization arrays of vias 14, left half antenna 15, right half antenna 16, dielectric-filled waveguide 17, the conduction band 18 of microstrip feed line 2, the ground plane 19 of microstrip feed line 2, the first radiation patch 20 of oscillator 4 and the second radiation arm 21 of oscillator 4.
Embodiment
Embodiment of the present invention is: thin substrate phasing oscillator difference beam plane horn antenna comprises the integrated horn antenna 3 of the microstrip feed line 2, the substrate that are arranged on medium substrate 1 and a plurality of oscillator 4; The first port 5 of described microstrip feed line 2 is input/output ports of this antenna, and the second port 6 of microstrip feed line 2 joins with the integrated horn antenna 3 of substrate; The integrated horn antenna 3 of substrate by be positioned at medium substrate 1 one side the first metal flat 7, be positioned at the second metal flat 8 of medium substrate 1 another side and two rows that are connected the first metal flat 7 and the second metal flat 8 through the medium substrate 1 via hole loudspeaker sidewalls 9 that metallize and form, width between two row's metallization via hole loudspeaker sidewalls 9 of the integrated horn antenna 3 of substrate becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face 10 of the integrated horn antenna 3 of substrate; In the integrated horn antenna 3 of substrate, there is odd number metallization arrays of vias 11 to connect the first metal flat 7 and the second metal flat 8, the head end 12 of metallization arrays of vias 11 is in the integrated horn antenna of substrate 3 inside, and the tail end 13 of metallization arrays of vias 11 is on the bore face 10 of the integrated horn antenna 3 of substrate; In metallization arrays of vias 11, there is an intermediate metallization arrays of vias 14 that the integrated horn antenna 3 of substrate is divided into a symmetrical left side half antenna 15 and right half antenna 16 two parts; Adjacent two metallization arrays of vias 11 or row's metallization via hole loudspeaker sidewall 9 that metallization arrays of vias 11 is adjacent, form dielectric-filled waveguide 17 with the first metal flat 7 and the second metal flat 8, outside bore face 10, each dielectric-filled waveguide 17 is connected to an oscillator 4.
The conduction band 18 of microstrip feed line 2 and the first metal flat 7 join, and the ground plane 19 of microstrip feed line 2 and the second metal flat 8 join.
The width of dielectric-filled waveguide 17 will make electromagnetic wave can propagate therein and not be cut off.
In described metallization arrays of vias 11, adjust the distance between adjacent two row metallization arrays of vias 11 or adjust the distance between a row metallization arrays of vias 11 and substrate integration wave-guide horn antenna 3 side-wall metallic via holes 9, can change the width of dielectric-filled waveguide 17, and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide 17, make to arrive on bore face 10 electromagnetic PHASE DISTRIBUTION more even.
In described metallization arrays of vias 11, the length that changes row or multiple row metallization arrays of vias 11 can change the length that respective media is filled waveguide 17, makes to arrive on bore face 10 electromagnetic PHASE DISTRIBUTION more even.
Each oscillator 4 has respectively the first radiation arm 20 and the second radiation arm 21 on the two sides that is positioned at medium substrate 1, the first radiation arm 20 of oscillator 4 is connected with the first metal flat 7 of the integrated horn antenna 3 of substrate, the second radiation arm 21 of oscillator 4 is connected with the second metal flat 8 of the integrated horn antenna 3 of substrate, and the first radiation arm 20 and second radiation arm 21 of each oscillator 4 stretch in the opposite direction.
The direction of extension of the first radiation arm 20 of all oscillators 4 that left half antenna 15 connects is all identical, and the direction of extension of the second radiation arm 21 of all oscillators 4 that left half antenna 15 connects is all identical; The direction of extension of the first radiation arm 20 of all oscillators 4 that right half antenna 16 connects is all identical, and the direction of extension of the second radiation arm 21 of all oscillators 4 that right half antenna 16 connects is all identical; The direction of extension of the second radiation arm 21 of the oscillator 4 that the direction of extension of the first radiation arm 20 of the oscillator 4 that left half antenna 15 connects connects with right half antenna 16 is identical, and the direction of extension of the first radiation arm 20 of the oscillator 4 that the direction of extension of the second radiation arm 21 of the oscillator 4 that left half antenna 15 connects connects with right half antenna 16 is identical.
In described metallization via hole loudspeaker sidewall 9 and metallization arrays of vias 11, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewall 9 and the metallization arrays of vias 11 that form can be equivalent to electric wall.
When design, regulate the phase place of electromagnetic wave arrival antenna opening diametric plane 10 mainly by being adjusted in the length of the electromagnetic phase velocity of dielectric-filled waveguide 17 and dielectric-filled waveguide 17, therefore will change the width of dielectric-filled waveguide 17, so just need to regulate position and the length of metallization arrays of vias 11.
In technique, thin substrate phasing oscillator difference beam plane horn antenna both can adopt common printed circuit board (PCB) (PCB) technique, also can adopt the integrated circuit technologies such as LTCC (LTCC) technique or CMOS, Si substrate to realize.The via hole that wherein metallizes can be that hollow metal through hole can be also solid metal hole, can be also continuous metallization wall, and the shape of metal throuth hole can be circular, can be also square or other shapes.
Structurally, according to same principle, can increase or reduce the quantity of metallization arrays of vias 11, and then change quantity and the size of oscillator 4, as long as guarantee that dielectric-filled waveguide 17 can transmit main mould.Due to the metallization via sidewall 9 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 10 is far away, therefore with respect to the dielectric-filled waveguide 17 away from from metallization via sidewall 9, the width relative narrower of the dielectric-filled waveguide 17 from metallization via sidewall 9 close to is to obtain higher electromagnetic transmission phase velocity.The shape of metallization arrays of vias 11 arrays can be straight line, broken line or other curve.
According to the above, just can realize the present invention.
Claims (8)
1. thin substrate phasing oscillator difference beam plane horn antenna, is characterized in that this antenna comprises microstrip feed line (2), the integrated horn antenna of substrate (3) and a plurality of oscillator (4) being arranged on medium substrate (1); First port (5) of described microstrip feed line (2) is the input/output port of this antenna, and second port (6) of microstrip feed line (2) joins with the integrated horn antenna of substrate (3); The integrated horn antenna of substrate (3) by be positioned at medium substrate (1) one side the first metal flat (7), be positioned at second metal flat (8) of medium substrate (1) another side and two rows that are connected the first metal flat (7) and the second metal flat (8) through medium substrate (1) the via hole loudspeaker sidewalls (9) that metallize and form, width between two row's metallization via hole loudspeaker sidewalls (9) of the integrated horn antenna of substrate (3) becomes large gradually, form tubaeform dehiscing, the end of dehiscing is the bore face (10) of the integrated horn antenna of substrate (3); In the integrated horn antenna of substrate (3), there is odd number metallization arrays of vias (11) to connect the first metal flat (7) and the second metal flat (8), the head end (12) of metallization arrays of vias (11) is in the integrated horn antenna of substrate (3) inside, and the tail end (13) of metallization arrays of vias (11) is on the bore face (10) of the integrated horn antenna of substrate (3); In metallization arrays of vias (11), there is an intermediate metallization arrays of vias (14) that the integrated horn antenna of substrate (3) is divided into a symmetrical left side half antenna (15) and right half antenna (16) two parts; Adjacent two metallization arrays of vias (11) or row's metallization via hole loudspeaker sidewalls (9) that the arrays of vias (11) that metallizes is adjacent, form dielectric-filled waveguide (17) with the first metal flat (7) and the second metal flat (8), outside bore face (10), each dielectric-filled waveguide (17) is connected to an oscillator (4).
2. thin substrate phasing oscillator difference beam plane horn antenna according to claim 1, the conduction band (18) that it is characterized in that microstrip feed line (2) joins with the first metal flat (7), and the ground plane (19) of microstrip feed line (2) joins with the second metal flat (8).
3. thin substrate phasing oscillator difference beam plane horn antenna according to claim 1, is characterized in that the width of dielectric-filled waveguide (17) will make electromagnetic wave can propagate therein and not be cut off.
4. according to the thin substrate phasing oscillator difference beam plane horn antenna described in claim 1 or 3, it is characterized in that in described metallization arrays of vias (11), adjust the distance between adjacent two row metallization arrays of vias (11), or adjust the distance between a row metallization arrays of vias (11) and substrate integration wave-guide horn antenna (3) side-wall metallic via hole (9), can change the width of dielectric-filled waveguide (17), and then be adjusted at the phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide (17), make to arrive the upper electromagnetic PHASE DISTRIBUTION of bore face (10) more even.
5. according to the thin substrate phasing oscillator difference beam plane horn antenna described in claim 1 or 3 or 4, it is characterized in that in described metallization arrays of vias (11), the length that changes row or multiple row metallization arrays of vias (11) can change the length that respective media is filled waveguide (17), makes to arrive the upper electromagnetic PHASE DISTRIBUTION of bore face (10) more even.
6. thin substrate phasing oscillator difference beam plane horn antenna according to claim 1, it is characterized in that each oscillator (4) has respectively the first radiation arm (20) and the second radiation arm (21) on the two sides that is positioned at medium substrate (1), first radiation arm (20) of oscillator (4) is connected with first metal flat (7) of the integrated horn antenna of substrate (3), second radiation arm (21) of oscillator (4) is connected with second metal flat (8) of the integrated horn antenna of substrate (3), the first radiation arm (20) and second radiation arm (21) of each oscillator (4) stretch in the opposite direction.
7. according to the thin substrate phase amplitude described in claim 1 or 7, proofread and correct line of rabbet joint difference beam plane horn antenna, the direction of extension of the first radiation arm (20) that it is characterized in that all oscillators (4) that left half antenna (15) connects is all identical, and the direction of extension of second radiation arm (21) of all oscillators (4) that left half antenna (15) connects is all identical; The direction of extension of first radiation arm (20) of all oscillators (4) that right half antenna (16) connects is all identical, and the direction of extension of second radiation arm (21) of all oscillators (4) that right half antenna (16) connects is all identical; The direction of extension of second radiation arm (21) of the oscillator (4) that the direction of extension of first radiation arm (20) of the oscillator (4) that left half antenna (15) connects connects with right half antenna (16) is identical, and the direction of extension of first radiation arm (20) of the oscillator (4) that the direction of extension of second radiation arm (21) of the oscillator (4) that left half antenna (15) connects connects with right half antenna (16) is identical.
8. thin substrate phasing oscillator difference beam plane horn antenna according to claim 1, it is characterized in that in described metallization via hole loudspeaker sidewalls (9) and metallization arrays of vias (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole loudspeaker sidewalls (9) and the metallization arrays of vias (11) that form can be equivalent to electric wall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310619383.6A CN103618144B (en) | 2013-11-29 | 2013-11-29 | Thin substrate phasing oscillator difference-beam planar horn antenna |
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| CN201310619383.6A CN103618144B (en) | 2013-11-29 | 2013-11-29 | Thin substrate phasing oscillator difference-beam planar horn antenna |
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| CN103618144A true CN103618144A (en) | 2014-03-05 |
| CN103618144B CN103618144B (en) | 2016-03-23 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4825220A (en) * | 1986-11-26 | 1989-04-25 | General Electric Company | Microstrip fed printed dipole with an integral balun |
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN103022708A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Phase-calibrated SIW (substrate integrated waveguide) antenna with embedded plated through holes |
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2013
- 2013-11-29 CN CN201310619383.6A patent/CN103618144B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4825220A (en) * | 1986-11-26 | 1989-04-25 | General Electric Company | Microstrip fed printed dipole with an integral balun |
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN103022708A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Phase-calibrated SIW (substrate integrated waveguide) antenna with embedded plated through holes |
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