CN103618144B - Thin substrate phasing oscillator difference-beam planar horn antenna - Google Patents
Thin substrate phasing oscillator difference-beam planar horn antenna Download PDFInfo
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- CN103618144B CN103618144B CN201310619383.6A CN201310619383A CN103618144B CN 103618144 B CN103618144 B CN 103618144B CN 201310619383 A CN201310619383 A CN 201310619383A CN 103618144 B CN103618144 B CN 103618144B
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Abstract
Thin substrate phasing oscillator difference-beam planar horn antenna relates to a kind of horn antenna.This antenna is included in the microstrip feed line (2) on medium substrate (1), horn antenna (3) and oscillator (4), horn antenna (3) is by the first metal flat (7), second metal flat (8) and two row's metallization via hole trumpet side walls (9) compositions, odd number metallization arrays of vias (11) and even number dielectric-filled waveguide (17) is had in horn antenna (3), in horn antenna (3) bore face (10), upper each dielectric-filled waveguide (17) is connected to an oscillator (4), left half antenna (15) and institute's oscillator that connects (4) and right half antenna (16) and institute's oscillator that connects (4) symmetrical.Electromagnetic wave can arrive oscillator radiation again by homophase, radiation field polarization and substrate-parallel, and this antenna can use thin substrate and gain high, large zero is dark, cost is low and compact conformation.
Description
Technical field
The present invention relates to a kind of horn antenna, especially a kind of thin substrate phasing oscillator difference-beam planar horn antenna.
Background technology
Horn antenna has a wide range of applications in the systems such as satellite communication, terrestrial microwave link and radio telescope.But the huge physical dimension of three-dimensional horn antenna constrains its application and development in planar circuit.In recent years, the proposition of substrate integrated waveguide technology and development well facilitate the development of planar horn antenna.Substrate integration wave-guide have size little, lightweight, be easy to integrated and the advantage such as processing and fabricating.Based on the substrate integration wave-guide planar horn antenna of the plane of substrate integration wave-guide except the feature with horn antenna, also well achieve the miniaturization of horn antenna, lightness, and be easy to be integrated in microwave and millimeter wave planar circuit.Traditional substrate integration wave-guide planar horn antenna have a restriction, the thickness of antenna horn aperture substrate is greater than 1/10th operation wavelengths, and antenna just can have good radiance, not so due to reflection, the energy emission in antenna is not gone out.So just require that the thickness of antenna substrate can not be too thin, L-band etc. comparatively low-frequency range to meet this requirement very difficult especially, very thick substrate not only volume and weight is very large, counteracts integrated advantage, but also adds cost.The polarised direction of these antenna radiation field is generally all perpendicular to medium substrate in addition, and some application needs the polarization parallel of radiation field in medium substrate.More existing antennas load the radiation that paster improves thin substrate plane horn antenna before planar horn antenna, but the patch size loaded is comparatively large, and working band is narrower.Generally for and realize difference beam, need to adopt special feeder equipment, these feeder equipments or not easily realize in planar circuit, or the phase-shift circuit of arrowband.The gain of substrate integration wave-guide planar horn antenna traditional is in addition relatively low, its reason is because horn mouth constantly opens, Electromagnetic Wave Propagation is caused to occur that phase place is asynchronous to during horn mouth diametric plane, radiation directivity and gain reduction, make zero of the difference beam antenna formed dark more shallow and slope is lower, affect the direction finding precision of radar.Existing method such as employing coated by dielectric, medium prism etc., correct loudspeaker aperture field, but these phase alignment structures adds the overall structure size of antenna at present.
Summary of the invention
technical problem:the object of the invention is to propose a kind of thin substrate phasing oscillator difference-beam planar horn antenna, the polarised direction of this radiation field of aerial is parallel with medium substrate, very thin medium substrate manufacture can be used, when the electric very thin thickness of substrate, still there is excellent radiance, and this planar horn antenna can on RECTIFYING ANTENNA bore face electromagnetic phase place inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam.
technical scheme:thin substrate phasing oscillator difference-beam planar horn antenna of the present invention, is characterized in that this antenna comprises the microstrip feed line be arranged on medium substrate, the integrated horn antenna of substrate and multiple oscillator; First port of described microstrip feed line is the input/output port of this antenna, and the second port of microstrip feed line connects with the integrated horn antenna of substrate; The integrated horn antenna of substrate to be connected the first metal flat and the second metal flat by the first metal flat being positioned at medium substrate one side, the second metal flat of being positioned at medium substrate another side two row's metallization via hole trumpet side walls with through medium substrate form, width between two row's metallization via hole trumpet side walls of the integrated horn antenna of substrate becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face of the integrated horn antenna of substrate; Odd number metallization arrays of vias is had to connect the first metal flat and the second metal flat in the integrated horn antenna of substrate, the head end of metallization arrays of vias is inner at the integrated horn antenna of substrate, and the tail end of metallization arrays of vias is on the bore face of the integrated horn antenna of substrate; In metallization arrays of vias, there is an intermediate metallization arrays of vias that integrated for substrate horn antenna is divided into a symmetrical left side half antenna and right half antenna two parts; Row's metallization via hole trumpet side walls that two adjacent metallization arrays of vias or a metallization arrays of vias are adjacent, form dielectric-filled waveguide with the first metal flat and the second metal flat, outside bore face, each dielectric-filled waveguide is connected to an oscillator.
The conduction band of microstrip feed line connects with the first metal flat, and the ground plane of microstrip feed line connects with the second metal flat.
The width of dielectric-filled waveguide will make electromagnetic wave to propagate and not to be cut off wherein.
In described metallization arrays of vias, adjust the distance between adjacent two row metallization arrays of vias or the distance between adjustment one row metallization arrays of vias and substrate integration wave-guide horn antenna sidewall metallization via hole, the width of dielectric-filled waveguide can be changed, and then adjustment phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide, make to arrive electromagnetic PHASE DISTRIBUTION on bore face evenly.
In described metallization arrays of vias, the length changing row or multiple row metallization arrays of vias can change respective media and fill the length of waveguide, make to arrive electromagnetic PHASE DISTRIBUTION on bore face evenly.
Each oscillator has the first radiation arm and the second radiation arm respectively on the two sides being positioned at medium substrate, first radiation arm of oscillator is connected with the first metal flat of the integrated horn antenna of substrate, second radiation arm of oscillator is connected with the second metal flat of the integrated horn antenna of substrate, and the first radiation arm and second radiation arm of each oscillator stretch in the opposite direction.
The direction of extension of the first radiation arm of all oscillators that left half antenna connects is all identical, and the direction of extension of the second radiation arm of all oscillators that left half antenna connects is all identical; The direction of extension of the first radiation arm of all oscillators that right half antenna connects is all identical, and the direction of extension of the second radiation arm of all oscillators that right half antenna connects is all identical; The direction of extension of the first radiation arm of the oscillator that left half antenna connects is identical with the direction of extension of the second radiation arm of the oscillator that right half antenna connects, and the direction of extension of the second radiation arm of the oscillator that left half antenna connects is identical with the direction of extension of the first radiation arm of the oscillator that right half antenna connects.
Metallize in via hole trumpet side walls and metallization arrays of vias, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls formed can be equivalent to electric wall with metallization arrays of vias.
In dielectric-filled waveguide, the propagation phase velocity of the main mould of electromagnetic wave (TE10 mould) is relevant with the width of dielectric-filled waveguide, and the width of dielectric-filled waveguide is wider, and the phase velocity that main mould is propagated is lower; Otherwise the width of dielectric-filled waveguide is narrower, the phase velocity that main mould is propagated is higher.Electromagnetic wave inputs from one end of microstrip feed line, and the other end through microstrip feed line enters substrate integration wave-guide horn antenna, after propagating a segment distance, runs into metallization arrays of vias, just enters the transmission of each dielectric-filled waveguide respectively.
Determine primarily of the length of each dielectric-filled waveguide and width in the power on PHASE DISTRIBUTION of magnetic wave of antenna opening diametric plane, distance between adjustment adjacent metal arrays of vias, just can regulate the width of dielectric-filled waveguide, and then the relative phase velocity that electromagnetic wave just can be regulated to transmit at each dielectric waveguide; The length of adjustment metallization arrays of vias is just equivalent to the length regulating dielectric-filled waveguide, so just can make the bore face being arrived antenna by the electromagnetic wave homophase of each dielectric-filled waveguide, on antenna opening diametric plane, the phase place of each dielectric-filled waveguide port is the same like this.
Electromagnetic wave from each dielectric waveguide enters element radiates by antenna opening diametric plane, because the radiation arm of left half antenna oscillator and the radiation arm of right half antenna oscillator are symmetrical, therefore the polarised direction of left half antenna oscillator radiation field is contrary with the polarised direction of right half antenna oscillator radiation field, so just defines difference beam in the direction of parallel medium substrate.
Just can control to power at antenna opening diametric plane the PHASE DISTRIBUTION of magnetic wave in the above described manner, if make to arrive antenna opening diametric plane by each dielectric-filled waveguide transmission electromagnetic wave homophase, and then homophase enter each element radiates, the polarised direction of radiation field also becomes and connects subparallel horizontal direction with substrate, so not only can make when the thin substrate of electricity, whole antenna has excellent radiance, and reaches the raising aperture efficiency of antenna and the object of gain.
Owing to there being multiple metallization arrays of vias that the bore face of antenna is divided into a lot of little bore faces, it is very little that the size of the oscillator that each osculum diametric plane connects can be done, and compact conformation, the size of such antenna also only increase seldom.
Antenna is between feeding microstrip line to oscillator, and be all closed substrate integrated wave guide structure, therefore feeder loss is less.
In like manner also can realize specific PHASE DISTRIBUTION as required on the bore face of antenna.
beneficial effect:the beneficial effect of the present invention's thin substrate phasing oscillator difference-beam planar horn antenna is that the polarised direction of this radiation field of aerial is parallel with medium substrate; This antenna can use the medium substrate manufacture of thickness of wavelength lower than 2 percent, far below the substrate thickness of 1/10th wavelength required by usual planar horn antenna, when the electric very thin thickness of substrate, still there is excellent radiance, such as in 6GHz frequency, adopt the thickness of epoxide resin material substrate can be reduced to 0.5mm by 2.5mm, thus greatly reduce size, weight and cost; And this planar horn antenna inside be embedded with metallization arrays of vias can on RECTIFYING ANTENNA bore face electromagnetic phase place inconsistent, increase the zero dark and improve the slope of antenna difference beam of antenna difference beam, compact conformation, the feeder loss of antenna are little.
Accompanying drawing explanation
Below in conjunction with accompanying drawing, the present invention is further described.
Fig. 1 is the structural representation of the present invention's thin substrate phasing oscillator difference-beam planar horn antenna.
Have in figure: the integrated horn antenna 3 of medium substrate 1, microstrip feed line 2, substrate, layered transducer elements 4, first port 5 of microstrip feed line 2, second port 6 of microstrip feed line 2, first metal flat 7 of medium substrate 1, second metal flat 8 of medium substrate 1, metallization via hole trumpet side walls 9, the bore face 10 of antenna 3, metallization arrays of vias 11, the head end 12 of metallization arrays of vias 11, the tail end 13 of metallization arrays of vias 11, intermediate metallization arrays of vias 14, left half antenna 15, right half antenna 16, dielectric-filled waveguide 17, the conduction band 18 of microstrip feed line 2, the ground plane 19 of microstrip feed line 2, first radiation patch 20 of oscillator 4 and the second radiation arm 21 of oscillator 4.
Embodiment
Embodiment of the present invention is: thin substrate phasing oscillator difference-beam planar horn antenna comprises the microstrip feed line 2 be arranged on medium substrate 1, the integrated horn antenna of substrate 3 and multiple oscillator 4; First port 5 of described microstrip feed line 2 is input/output ports of this antenna, and the second port 6 of microstrip feed line 2 connects with the integrated horn antenna 3 of substrate; The integrated horn antenna 3 of substrate to be connected the first metal flat 7 and the second metal flat 8 by the first metal flat 7 being positioned at medium substrate 1 one side, the second metal flat 8 of being positioned at medium substrate 1 another side two row's metallization via hole trumpet side walls 9 with through medium substrate 1 form, width between two row's metallization via hole trumpet side walls 9 of the integrated horn antenna of substrate 3 becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face 10 of the integrated horn antenna 3 of substrate; Odd number metallization arrays of vias 11 is had to connect the first metal flat 7 and the second metal flat 8 in the integrated horn antenna 3 of substrate, the head end 12 of metallization arrays of vias 11 is inner at the integrated horn antenna 3 of substrate, and the tail end 13 of metallization arrays of vias 11 is on the bore face 10 of the integrated horn antenna 3 of substrate; In metallization arrays of vias 11, there is an intermediate metallization arrays of vias 14 that integrated for substrate horn antenna 3 is divided into a symmetrical left side half antenna 15 and right half antenna 16 two parts; Row's metallization via hole trumpet side walls 9 that two adjacent metallization arrays of vias 11 or a metallization arrays of vias 11 are adjacent, form dielectric-filled waveguide 17 with the first metal flat 7 and the second metal flat 8, in bore face 10, outer each dielectric-filled waveguide 17 is connected to an oscillator 4.
The conduction band 18 of microstrip feed line 2 connects with the first metal flat 7, and the ground plane 19 of microstrip feed line 2 connects with the second metal flat 8.
The width of dielectric-filled waveguide 17 will make electromagnetic wave to propagate and not to be cut off wherein.
In described metallization arrays of vias 11, adjust the distance between adjacent two row metallization arrays of vias 11 or the distance between adjustment one row metallization arrays of vias 11 and substrate integration wave-guide horn antenna 3 sidewall metallization via hole 9, the width of dielectric-filled waveguide 17 can be changed, and then adjustment phase velocity of Electromagnetic Wave Propagation in this dielectric-filled waveguide 17, make to arrive electromagnetic PHASE DISTRIBUTION on bore face 10 evenly.
In described metallization arrays of vias 11, the length changing row or multiple row metallization arrays of vias 11 can change respective media and fill the length of waveguide 17, make to arrive electromagnetic PHASE DISTRIBUTION on bore face 10 evenly.
Each oscillator 4 has the first radiation arm 20 and the second radiation arm 21 respectively on the two sides being positioned at medium substrate 1, first radiation arm 20 of oscillator 4 is connected with the first metal flat 7 of the integrated horn antenna 3 of substrate, second radiation arm 21 of oscillator 4 is connected with the second metal flat 8 of the integrated horn antenna 3 of substrate, and the first radiation arm 20 of each oscillator 4 and the second radiation arm 21 stretch in the opposite direction.
The direction of extension of the first radiation arm 20 of all oscillators 4 that left half antenna 15 connects is all identical, and the direction of extension of the second radiation arm 21 of all oscillators 4 that left half antenna 15 connects is all identical; The direction of extension of the first radiation arm 20 of all oscillators 4 that right half antenna 16 connects is all identical, and the direction of extension of the second radiation arm 21 of all oscillators 4 that right half antenna 16 connects is all identical; The direction of extension of the first radiation arm 20 of the oscillator 4 that left half antenna 15 connects is identical with the direction of extension of the second radiation arm 21 of the oscillator 4 that right half antenna 16 connects, and the direction of extension of the second radiation arm 21 of the oscillator 4 that left half antenna 15 connects is identical with the direction of extension of the first radiation arm 20 of the oscillator 4 that right half antenna 16 connects.
Described metallization via hole trumpet side walls 9 is with in metallization arrays of vias 11, the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls 9 formed can be equivalent to electric wall with metallization arrays of vias 11.
When designing, electromagnetic wave is regulated to arrive the phase place of antenna opening diametric plane 10 mainly through regulating the length in the electromagnetic phase velocity of dielectric-filled waveguide 17 and dielectric-filled waveguide 17, therefore the width of dielectric-filled waveguide 17 will be changed, so just need the position and the length that regulate metallization arrays of vias 11.
In technique, thin substrate phasing oscillator difference-beam planar horn antenna both can adopt common printed circuit board (PCB) (PCB) technique, and the integrated circuit technologies such as LTCC (LTCC) technique or CMOS, Si substrate also can be adopted to realize.The via hole that wherein metallizes can be hollow metal through hole also can be solid metal hole, and also can be continuous print metallization wall, the shape of metal throuth hole can be circular, also can be square or other shapes.
Structurally, according to same principle, can increase or reduce the quantity of metallization arrays of vias 11, and then change quantity and the size of oscillator 4, as long as ensure that dielectric-filled waveguide 17 can transmit main mould.Due to the metallization via sidewall 9 the closer to antenna, the distance that electromagnetic wave arrives antenna opening diametric plane 10 is far away, therefore relative to from the dielectric-filled waveguide 17 away from metallization via sidewall 9, from the width relative narrower of dielectric-filled waveguide 17 close to metallization via sidewall 9 to obtain higher electromagnetic transmission phase velocity.The shape of metallization arrays of vias 11 array can be straight line, broken line or other curve.
According to the above, just the present invention can be realized.
Claims (6)
1. thin substrate phasing oscillator difference-beam planar horn antenna, is characterized in that this antenna comprises the microstrip feed line (2) be arranged on medium substrate (1), the integrated horn antenna of substrate (3) and multiple oscillator (4); First port (5) of described microstrip feed line (2) is the input/output port of this antenna, and second port (6) of microstrip feed line (2) connects with the integrated horn antenna of substrate (3); The integrated horn antenna of substrate (3) to be connected the first metal flat (7) and the second metal flat (8) by the first metal flat (7) being positioned at medium substrate (1) one side, the second metal flat (8) of being positioned at medium substrate (1) another side two rows with through medium substrate (1) via hole trumpet side walls (9) that metallizes forms, width between two rows' metallization via hole trumpet side walls (9) of the integrated horn antenna of substrate (3) becomes large gradually, form one tubaeformly to dehisce, the end of dehiscing is the bore face (10) of the integrated horn antenna of substrate (3); Odd number metallization arrays of vias (11) is had to connect the first metal flat (7) and the second metal flat (8) in the integrated horn antenna of substrate (3), the head end (12) of metallization arrays of vias (11) is inner at the integrated horn antenna of substrate (3), and the tail end (13) of metallization arrays of vias (11) is on the bore face (10) of the integrated horn antenna of substrate (3); In metallization arrays of vias (11), there is an intermediate metallization arrays of vias (14) that integrated for substrate horn antenna (3) is divided into a symmetrical left side half antenna (15) and right half antenna (16) two parts; Row's metallization via hole trumpet side walls (9) that two adjacent metallization arrays of vias (11) or metallization arrays of vias (11) are adjacent, form dielectric-filled waveguide (17) with the first metal flat (7) and the second metal flat (8), bore face (10) outward each dielectric-filled waveguide (17) be connected to an oscillator (4) through the broadband line such as a section;
The thickness of medium substrate (1) lower than 2 percent wavelength;
Each oscillator (4) has the first radiation arm (20) and the second radiation arm (21) respectively on the two sides being positioned at medium substrate (1), first radiation arm (20) of oscillator (4) is connected with first metal flat (7) of the integrated horn antenna of substrate (3), second radiation arm (21) of oscillator (4) is connected with second metal flat (8) of the integrated horn antenna of substrate (3), and the first radiation arm (20) and second radiation arm (21) of each oscillator (4) stretch in the opposite direction;
The direction of extension of first radiation arm (20) of all oscillators (4) that left half antenna (15) connects is all identical, and the direction of extension of second radiation arm (21) of all oscillators (4) that left half antenna (15) connects is all identical;
The direction of extension of first radiation arm (20) of all oscillators (4) that right half antenna (16) connects is all identical, and the direction of extension of second radiation arm (21) of all oscillators (4) that right half antenna (16) connects is all identical;
The direction of extension of first radiation arm (20) of the oscillator (4) that left half antenna (15) connects is identical with the direction of extension of second radiation arm (21) of the oscillator (4) that right half antenna (16) connects, and the direction of extension of second radiation arm (21) of the oscillator (4) that left half antenna (15) connects is identical with the direction of extension of first radiation arm (20) of the oscillator (4) that right half antenna (16) connects.
2. thin substrate phasing oscillator difference-beam planar horn antenna according to claim 1, it is characterized in that the conduction band (18) of microstrip feed line (2) connects with the first metal flat (7), the ground plane (19) of microstrip feed line (2) connects with the second metal flat (8).
3. thin substrate phasing oscillator difference-beam planar horn antenna according to claim 1, is characterized in that the width of dielectric-filled waveguide (17) will make electromagnetic wave to propagate and not to be cut off wherein.
4. thin substrate phasing oscillator difference-beam planar horn antenna according to claim 1, it is characterized in that in described metallization arrays of vias (11), adjust the distance between adjacent two row metallization arrays of vias (11), or the distance between adjustment one row metallization arrays of vias (11) and substrate integration wave-guide horn antenna (3) sidewall metallization via hole (9), the width of dielectric-filled waveguide (17) can be changed, and then the phase velocity of adjustment Electromagnetic Wave Propagation in this dielectric-filled waveguide (17), make to arrive the upper electromagnetic PHASE DISTRIBUTION in bore face (10) evenly.
5. thin substrate phasing oscillator difference-beam planar horn antenna according to claim 1, it is characterized in that in described metallization arrays of vias (11), the length changing row or multiple row metallization arrays of vias (11) can change the length that respective media fills waveguide (17), make to arrive the upper electromagnetic PHASE DISTRIBUTION in bore face (10) evenly.
6. thin substrate phasing oscillator difference-beam planar horn antenna according to claim 1, it is characterized in that in described metallization via hole trumpet side walls (9) and metallization arrays of vias (11), the spacing of two adjacent metallization via holes is less than or equals 1/10th of operation wavelength, makes the metallization via hole trumpet side walls (9) of formation and metallization arrays of vias (11) can be equivalent to electric wall.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201310619383.6A CN103618144B (en) | 2013-11-29 | 2013-11-29 | Thin substrate phasing oscillator difference-beam planar horn antenna |
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| CN201310619383.6A CN103618144B (en) | 2013-11-29 | 2013-11-29 | Thin substrate phasing oscillator difference-beam planar horn antenna |
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| CN103618144A CN103618144A (en) | 2014-03-05 |
| CN103618144B true CN103618144B (en) | 2016-03-23 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4825220A (en) * | 1986-11-26 | 1989-04-25 | General Electric Company | Microstrip fed printed dipole with an integral balun |
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN103022708A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Phase-calibrated SIW (substrate integrated waveguide) antenna with embedded plated through holes |
-
2013
- 2013-11-29 CN CN201310619383.6A patent/CN103618144B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4825220A (en) * | 1986-11-26 | 1989-04-25 | General Electric Company | Microstrip fed printed dipole with an integral balun |
| CN101075702A (en) * | 2007-06-19 | 2007-11-21 | 东南大学 | Printing antenna with baseplate integrated waveguide feeder |
| CN103022708A (en) * | 2012-12-21 | 2013-04-03 | 东南大学 | Phase-calibrated SIW (substrate integrated waveguide) antenna with embedded plated through holes |
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