DE102005000809A1 - Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten - Google Patents
Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten Download PDFInfo
- Publication number
- DE102005000809A1 DE102005000809A1 DE200510000809 DE102005000809A DE102005000809A1 DE 102005000809 A1 DE102005000809 A1 DE 102005000809A1 DE 200510000809 DE200510000809 DE 200510000809 DE 102005000809 A DE102005000809 A DE 102005000809A DE 102005000809 A1 DE102005000809 A1 DE 102005000809A1
- Authority
- DE
- Germany
- Prior art keywords
- memory cells
- integrated semiconductor
- memory
- semiconductor memory
- volatile
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4097—Bit-line organisation, e.g. bit-line layout, folded bit lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/18—Bit line organisation; Bit line lay-out
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/1208—Error catch memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200510000809 DE102005000809B4 (de) | 2005-01-05 | 2005-01-05 | Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE200510000809 DE102005000809B4 (de) | 2005-01-05 | 2005-01-05 | Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102005000809A1 true DE102005000809A1 (de) | 2006-07-13 |
DE102005000809B4 DE102005000809B4 (de) | 2012-09-13 |
Family
ID=36599444
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE200510000809 Expired - Fee Related DE102005000809B4 (de) | 2005-01-05 | 2005-01-05 | Integrierter Halbleiterspeicher mit nichtflüchtiger Speicherung von Daten |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE102005000809B4 (un) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0247739A2 (en) * | 1986-04-30 | 1987-12-02 | Fujitsu Limited | Semiconductor nonvolatile memory device |
EP0096781B1 (en) * | 1982-06-16 | 1989-11-29 | International Business Machines Corporation | System for updating error map of fault tolerant memory |
EP0530928B1 (en) * | 1987-07-02 | 1997-04-16 | Ramtron International Corporation | Ferroelectric shadow RAM |
DE10035598A1 (de) * | 2000-07-21 | 2002-02-07 | Infineon Technologies Ag | Datenträger mit einem Datenspeicher |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3365650B2 (ja) * | 1993-05-31 | 2003-01-14 | 沖電気工業株式会社 | 半導体メモリ装置 |
DE10101268A1 (de) * | 2001-01-12 | 2002-07-25 | Infineon Technologies Ag | Integrierte Halbleiterschaltung |
-
2005
- 2005-01-05 DE DE200510000809 patent/DE102005000809B4/de not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0096781B1 (en) * | 1982-06-16 | 1989-11-29 | International Business Machines Corporation | System for updating error map of fault tolerant memory |
EP0247739A2 (en) * | 1986-04-30 | 1987-12-02 | Fujitsu Limited | Semiconductor nonvolatile memory device |
EP0530928B1 (en) * | 1987-07-02 | 1997-04-16 | Ramtron International Corporation | Ferroelectric shadow RAM |
DE10035598A1 (de) * | 2000-07-21 | 2002-02-07 | Infineon Technologies Ag | Datenträger mit einem Datenspeicher |
Also Published As
Publication number | Publication date |
---|---|
DE102005000809B4 (de) | 2012-09-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
OP8 | Request for examination as to paragraph 44 patent law | ||
8127 | New person/name/address of the applicant |
Owner name: QIMONDA AG, 81739 MUENCHEN, DE |
|
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |
Effective date: 20121214 |
|
R081 | Change of applicant/patentee |
Owner name: POLARIS INNOVATIONS LTD., IE Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE Owner name: INFINEON TECHNOLOGIES AG, DE Free format text: FORMER OWNER: QIMONDA AG, 81739 MUENCHEN, DE |
|
R082 | Change of representative | ||
R081 | Change of applicant/patentee |
Owner name: POLARIS INNOVATIONS LTD., IE Free format text: FORMER OWNER: INFINEON TECHNOLOGIES AG, 85579 NEUBIBERG, DE |
|
R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |