DE60326545D1 - Zusammengesetzte speicherschaltung und zugehörige halbleiterschaltung - Google Patents

Zusammengesetzte speicherschaltung und zugehörige halbleiterschaltung

Info

Publication number
DE60326545D1
DE60326545D1 DE60326545T DE60326545T DE60326545D1 DE 60326545 D1 DE60326545 D1 DE 60326545D1 DE 60326545 T DE60326545 T DE 60326545T DE 60326545 T DE60326545 T DE 60326545T DE 60326545 D1 DE60326545 D1 DE 60326545D1
Authority
DE
Germany
Prior art keywords
switching
associated semiconductor
composed memory
semiconductor switching
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60326545T
Other languages
English (en)
Inventor
K Moriyama
H Mori
H Tsukazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of DE60326545D1 publication Critical patent/DE60326545D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
DE60326545T 2002-02-08 2003-02-07 Zusammengesetzte speicherschaltung und zugehörige halbleiterschaltung Expired - Lifetime DE60326545D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002033166A JP2003233990A (ja) 2002-02-08 2002-02-08 複合記憶回路構造及び同複合記憶回路構造を有する半導体装置
PCT/JP2003/001349 WO2003067602A1 (fr) 2002-02-08 2003-02-07 Circuit memoire composite et dispositif semi-conducteur comprenant ce circuit

Publications (1)

Publication Number Publication Date
DE60326545D1 true DE60326545D1 (de) 2009-04-23

Family

ID=27677994

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60326545T Expired - Lifetime DE60326545D1 (de) 2002-02-08 2003-02-07 Zusammengesetzte speicherschaltung und zugehörige halbleiterschaltung

Country Status (7)

Country Link
US (1) US7385845B2 (de)
EP (1) EP1473733B1 (de)
JP (1) JP2003233990A (de)
KR (1) KR100984380B1 (de)
CN (1) CN100538874C (de)
DE (1) DE60326545D1 (de)
WO (1) WO2003067602A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100394402C (zh) * 2005-01-19 2008-06-11 上海乐金广电电子有限公司 复合存储媒介的数据连续存储及其读取方法
US8021469B2 (en) 2005-07-14 2011-09-20 Access Business Group International Llc Control methods for an air treatment system
US7599210B2 (en) 2005-08-19 2009-10-06 Sony Corporation Nonvolatile memory cell, storage device and nonvolatile logic circuit
KR100849224B1 (ko) * 2007-02-01 2008-07-31 삼성전자주식회사 메모리 카드 시스템의 메모리 카드에 전원을 공급하는 방법및 메모리 카드 시스템
US7791941B2 (en) * 2007-10-26 2010-09-07 Micron Technology, Inc. Non-volatile SRAM cell
KR100929313B1 (ko) * 2007-12-31 2009-11-27 주식회사 하이닉스반도체 반도체 메모리 장치
US8873308B2 (en) * 2012-06-29 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Signal processing circuit
US9471129B2 (en) 2014-08-07 2016-10-18 Empire Technology Development Llc Determining a write operation
KR20180102558A (ko) * 2016-01-15 2018-09-17 소니 주식회사 반도체 회로, 구동 방법 및 전자 기기

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699A (en) * 1979-06-14 1981-01-06 Mitsubishi Electric Corp Semiconductor memory unit
JPS5868300A (ja) 1981-10-20 1983-04-23 Toshiba Corp 低消費電力メモリ回路
US4408303A (en) * 1981-12-28 1983-10-04 Mostek Corporation Directly-coupled and capacitively coupled nonvolatile static RAM cell
US5357459A (en) * 1985-07-15 1994-10-18 Texas Instruments Incorporated Nonvolatile capacitor random access memory
JPS62256296A (ja) * 1986-04-30 1987-11-07 Fujitsu Ltd 半導体不揮発性記憶装置
JPH0281398A (ja) 1988-09-19 1990-03-22 Hitachi Ltd 半導体記憶装置
JPH02100743A (ja) * 1988-10-07 1990-04-12 Tokyo Electric Co Ltd 電子機器
US5097449A (en) * 1990-03-15 1992-03-17 Vlsi Technology, Inc. Non-volatile memory structure
JPH0442496A (ja) * 1990-06-08 1992-02-13 New Japan Radio Co Ltd 不揮発性ｒａｍ
JPH0770228B2 (ja) * 1990-10-01 1995-07-31 日鉄セミコンダクター株式会社 半導体メモリの書込み動作制御方法
JPH0728712A (ja) 1993-07-13 1995-01-31 Nec Corp 記憶装置
US5557272A (en) * 1994-06-16 1996-09-17 International Business Machines Corporation Non-volatile serial-to-parallel converter system utilizing thin-film, floating-gate, amorphous transistors
JP3274780B2 (ja) 1994-11-22 2002-04-15 日本無線株式会社 電源供給方法
JP3672954B2 (ja) 1994-12-26 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
JP2986059B2 (ja) * 1995-03-08 1999-12-06 インターナショナル・ビジネス・マシーンズ・コーポレイション バッテリ充電装置
JP2692641B2 (ja) * 1995-03-24 1997-12-17 日本電気株式会社 不揮発性メモリセル
US6016516A (en) * 1996-08-07 2000-01-18 Fuji Xerox Co. Ltd. Remote procedure processing device used by at least two linked computer systems
US6438708B1 (en) * 1997-11-07 2002-08-20 Hitachi, Ltd. Information processing apparatus that can hold internal information
US6102963A (en) * 1997-12-29 2000-08-15 Vantis Corporation Electrically erasable and reprogrammable, nonvolatile integrated storage device with in-system programming and verification (ISPAV) capabilities for supporting in-system reconfiguring of PLD's
JP2000194607A (ja) 1998-12-24 2000-07-14 Yamatake Corp メモリ・バックアップ方法
JP4066571B2 (ja) * 1999-02-17 2008-03-26 株式会社デンソー 携帯型光学情報読取り装置
WO2001037066A1 (fr) * 1999-11-16 2001-05-25 Fujitsu Limited Processeur d'informations et support lisible par ordinateur
JP2001199556A (ja) * 2000-01-18 2001-07-24 Canon Inc 画像形成装置
JP4282919B2 (ja) * 2001-04-27 2009-06-24 インターナショナル・ビジネス・マシーンズ・コーポレーション レジスタ
US6904541B1 (en) * 2001-08-10 2005-06-07 Emc Corporation Methods and apparatus for providing power to electronic circuitry

Also Published As

Publication number Publication date
KR100984380B1 (ko) 2010-09-30
CN100538874C (zh) 2009-09-09
EP1473733A4 (de) 2005-07-27
US7385845B2 (en) 2008-06-10
JP2003233990A (ja) 2003-08-22
EP1473733B1 (de) 2009-03-11
EP1473733A1 (de) 2004-11-03
CN1643614A (zh) 2005-07-20
WO2003067602A1 (fr) 2003-08-14
US20050077543A1 (en) 2005-04-14
KR20040078688A (ko) 2004-09-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition