Oct 1, 1996 · The effects of residual ion damage in low‐energy (30 eV–30 keV) C+‐doped GaAs were investigated with regard to the electrical and optical ...
The effects of residual ion damage in low-energy (30 eV ... C+-energy-dependent residual ion damage in GaAs:C grown by the low-energy ion-beam doping method.
... low-energy C+ ion beam offers advantages such as low damage doping and good activation rate of incorporated C atoms. C<sup>+</sup>-energy-dependent residual ion ...
C+-energy-dependent residual ion damage in GaAs:C grown by the low-energy ion-beam doping method. Tsutomu Iida, Yunosuke Makita, Takayuki Shima, Shinji ...
「C+-energy-dependent residual ion damage in GaAs:C grown by the low-energy ion-beam doping method」の研究トピックを掘り下げます。これらがまとまってユニーク ...
C+-energy-dependent residual ion damage in GaAs:C grown by the low-energy ion-beam doping method. Journal of Applied Physics, Vol. 80, Issue. 7, p. 3828 ...
Energy-dependent RBS channeling analysis was used to identify the defects as ... Attention is focused on low-energy (<10 keV) physical sputtering effects.
... growth method, surface polarity, and doping concentration. X-ray photoelectron ... energy-dependent effects, deposition (sticking of deposited atoms or ...
Information on the energy dependent creation and recombination of electrons ... C+‐energy‐dependent residual ion damage in GaAs:C grown by the low‐energy ion‐beam ...
Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam ... energy-dependent proton and potassium ion transport by E. coli. PubMed.