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The gate current is strongly reduced for injection from the TiN (gate) electrode compared to injection from the n-type Si substrate. For substrate injection, ...
May 1, 2003 · A detailed study on charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes has been carried out.
Abstract—A detailed study on charge trapping and dielectric re- liability of SiO2–Al2O3 gate stacks with TiN electrodes has been carried out.
A detailed study on charge trapping and dielectric reliability of SiO2-Al2O3 gate stacks with TiN electrodes has been carried out. Due to the inherent ...
Polarity-dependent charge trapping and defect generation have been observed in SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> gate stacks with TiN electrodes.
Polarity-dependent charge trapping and defect generation have been observed in SiO2 / Al2O3 gate stacks with TiN electrodes. For the substrate injection ...
Strong correlation between dielectric reliability and charge trapping in SiO/sub 2//Al/sub 2/O/sub 3/ gate stacks with TiN electrodes.
Strong correlation between dielectric reliability and charge trapping in SiO2/Al2O3 gate stacks with TiN electrodes ; dc.contributor.author, Roussel, Philippe.
Polarity-dependent charge trapping and defect generation have been observed in SiO2 / Al2O3 gate stacks with TiN electrodes. For the substrate injection case, ...
This phenomenon has been reported for conventional SiO2 gate dielectrics [51] and similar results have been observed for SiO2/Al2O3 high-k dielectric stacks [37] ...