In addition to improved electret properties the internal stress in the investigated double layers can be adjusted by a proper thickness ratio of oxide layer to ...

Abstract: Experimental results on charge storage and discharge in double layers of silicon dioxide and silicon nitride will be reported and discussed.

Experimental results on charge storage and discharge in double layers of silicon dioxide and silicon nitride will be reported and discussed.

Charge storage in double layers of silicon dioxide and silicon nitride. Amjadi H. Expand. Publication type: Proceedings Article. —. DOI: 10.1109/ISE.1996.578033.

Apr 9, 2014 · In this study, we have measured the charge concentration inside as-deposited oxide/nitride double layers used for surface passivation of high ...

PDF | Charge transport was studied in double layers of 150 nm silicon nitride and 300 nm silicon oxide on silicon substrate by determining the location.

Apr 25, 2001 · Charge storage in double layers of thermally grown silicon dioxide and APCVD silicon nitride · H. Amjadi. Engineering, Physics. 1999.

Abstract - The double layers of SiO2/SisNa have superior charge storage stability than a single layer of SiO2. Many researchers are very interested in the ...

Beside silicon nitride, silicon rich SiOx is a good charge storage material for the charge trap type of nonvolatile memory due to the high density of the ...

May 14, 2011 · Even a 2 nm Si3N4 layer is enough to significantly improve the charge stability in high humidity environment. Thick SiO2 layer can increase the ...