PDF | We report on numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes with p-NiO interlayer, and on LED design optimization.
We report on numerical investigations of p-GaN/n-ZnO light-emitting devices with p-NiO interlayer, and on LED design optimization which includes bandgap ...
May 12, 2015 · We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED ...
We report on a numerical study of the characteristics of p-GaN/n-ZnO light-emitting diodes (LEDs) with p-NiO and n-ZnSe interlayers, and on LED design ...
Semantic Scholar extracted view of "Effect of p-NiO Interlayer on Internal Quantum Efficiency of p-GaN/n-ZnO Light-Emitting Devices" by V. Sirkeli et al.
Oct 25, 2014 · I. INTRODUCTION. The III-V and II-VI wide bandgap semiconductors like gallium nitride (GaN) and zinc oxide (ZnO) was attracted.
The p-NiO/n-GaN heterojunction, which produces a type II band bias, has significant prospects for creating photosensitive devices.
Sep 3, 2015 · The external quantum efficiency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the ...
Missing: NiO Interlayer
Sep 2, 2020 · Previously, the studies on UV-sensitive NiO/ZnO solar cells demonstrated that the NiO and ZnO materials had high UV conversion efficiency in ...
With the increase of Mg composition for QBs from n-side to p-side, the maximum internal quantum efficiency of various LEDs increase from 32.6% to 91.9%. These ...