Intraband relaxation of electrons and holes in semiconductors occurs on a femtosecond time scale. Nevertheless, it has a considerable impact on both the ...

Intraband relaxation of electrons and holes in semiconductors occurs on a femtosecond time scale. Nevertheless, it has a considerable impact on both the ...

Experimental Determination of the Intraband Relaxation Time in Strained Quantum Well Lasers · M. Zimmermann, S. Krämer, +5 authors. A. Hangleiter · Published 1996 ...

Experimental determination of the intraband relaxation time in strained quantum well lasers. Konferenzveröffentlichung, Bibliographie. Typ des Eintrags ...

In this paper, we calculate the direct gap optical gain of [100] uniaxial tensile strained and n + -doped Ge/Ge 0.85 Si 0.15 QW.

The intraband relaxation time for wurtzite (WZ) 3.5-nm In0.15Ga0.85N/ In0.02Ga0.98N quantum well (QW) lasers is investigated theoretically.

The calculated intraband relaxation time is about 24 fs at the subband edge and gradually increases with the energy. The intraband relaxation time is shown to ...

PDF | We present a comprehensive model for the calculation of the bandedge profile of both the In1-xGaxAsyP1-y and In1-x-yGaxAlyAs quantum-well.

"Experimental determination of the intraband relaxation time in strained quantum well lasers" Hot carriers in semiconductors IX, Chicago 1995. A. Hangleiter

In semiconductor lasers, the intraband relaxation time τin is of fundamental importance in determining their static and dynamic properties. The spectra of ...