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A 30 keV dual beam system with focused ion and electron beams has been used to develop a fast fabrication process of field emitter arrays (FEAs).
It is shown that field emitters fabricated with EBID can reach high currents at relatively low voltage. Deposited wires are capable of carrying very high ...
We report on the fabrication of highly uniform field emitter arrays (FEAs) with an integrated self-aligned extraction gate from bulk molybdenum.
We propose a novel standing technique of fabricating a high-aspect-ratio tip structure. The technique utilizes the bending of films induced by ion irradiation.
Aug 7, 2006 · An efficient method has been developed to fabricate field electron emitters by cutting a continuous multiwalled carbon nanotube (MWNT) yarn ...
Missing: Induced | Show results with:Induced
A dual beam system consisting of focused ion and electron beams was used for manufacturing of Nb-gated silicon field emitter arrays.
Abstract— The carbon nanotube (CNT) field emitter was fabricated using a thin free-standing CNT film, indicating a line- shape CNT field emitter.
Pt emitters were deposited using electron-beam-induced reaction on overetched Si emitters fabricated by a conventional dry etching process. An emission current ...
May 1, 2001 · Metal-gated Pt field emitter arrays (FEAs) have been manufactured using a dual beam system consisting of focused ion and electron beams.
Missing: High- | Show results with:High-
Jul 4, 2024 · We cover the applications of EFID in various organic materials such as organic small molecules, polymers, MOFs, COFs, HOFs, biomaterials, other ...