Oct 1, 2018 · The simulation results demonstrate that the Mg–Si pin-doping in the GaN barrier effectively reduces the polarization-induced electric field ...
In this work we study numerically the effect of Mg-Si pindoping of GaN quantum barrier within InGaN/GaN multi quantum wells (MQWs) on the internal quantum ...
It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and ...
Internal quantum efficiency enhancement of InGaN/GaN LEDs ... - IBN
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Feb 8, 2019 · In this work we study numerically the effect of Mg-Si pin-doping of GaN quantum barrier within InGaN/GaN multi quantum wells (MQWs) on the ...
It is established that the LED device with Mg-Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power performance, and ...
Jan 11, 2024 · It is established that the LED device with Mg–Si pin-doping in the GaN barrier has significantly improved efficiency and optical output power ...
In this work we study numerically the effect of Mg-Si pin-doping of GaN quantum barrier within InGaN/GaN multi quantum wells (MQWs) on the internal quantum ...
The advantages of an InGaN light-emitting diode (LED) structure with Mg–Si-codoped barriers are studied numerically in this paper.
In the past decade the InGaN/GaN-based light-emitting diodes (LEDs) have attracted attention of most researchers as a promising candidate to replace ...
Efficiency enhancement of InGaN/GaN light-emitting diodes with pin-doped GaN quantum barrier · Physics, Engineering · 2016.